Improvement Breakdown Voltage by a Using Crown-Shaped Gate

In this paper, a crown-shaped trench gate formed by sidewall spacer in insulated bipolar transistors (IGBT) is proposed to improve breakdown voltage. When added bottom corners, the electric field distributed surface of and decreased 48% peak value field. Thus, IGBT improved 5% Another study an additional oxide layer for corners voltage similar IGBT. Previous studies have shown degradation other electrical characteristics. However, shows that increases current over 3% compared conventional when applied under 4 V. Additionally, turn-off loss characteristic Therefore, was while maintaining properties existing IGBTs through gate.